HUF75645S3ST onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 800+ | 3.08 EUR |
| 1600+ | 2.64 EUR |
| 2400+ | 2.48 EUR |
| 5600+ | 2.38 EUR |
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Technische Details HUF75645S3ST onsemi
Description: MOSFET N-CH 100V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V, Power Dissipation (Max): 310W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V.
Weitere Produktangebote HUF75645S3ST nach Preis ab 2.6 EUR bis 5.1 EUR
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HUF75645S3ST | Hersteller : onsemi / Fairchild |
MOSFET 75a 100V N-Ch UltraFET |
auf Bestellung 12652 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75645S3ST | Hersteller : onsemi |
Description: MOSFET N-CH 100V 75A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 14970 Stücke: Lieferzeit 10-14 Tag (e) |
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