HUF76139S3 Harris Corporation

Description: N-CHANNEL POWER MOSFET, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: I2PAK (TO-262), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 200W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel.