Technische Details HUF76419D3 FAIRCHILD
Description: MOSFET N-CH 60V 20A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: I-PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V.
Weitere Produktangebote HUF76419D3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| HUF76419D3 | Hersteller : FAIRCHILD |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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| HUF76419D3 | Hersteller : FAIRCHILD |
SOT-252 |
auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
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HUF76419D3 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) TO-251 Rail |
Produkt ist nicht verfügbar |
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HUF76419D3 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 20A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
Produkt ist nicht verfügbar |