Produkte > ONSEMI > HUF76432P3

HUF76432P3 onsemi


HUF76432P3%2CS3S.pdf
Hersteller: onsemi
Description: MOSFET N-CH 60V 59A TO220-3
Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 130W (Tc)
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details HUF76432P3 onsemi

Description: MOSFET N-CH 60V 59A TO220-3, Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 130W (Tc).

Weitere Produktangebote HUF76432P3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
HUF76432P3 HUF76432P3 onsemi / Fairchild HUF76432P3%2CS3S.pdf MOSFET 55a 60V 0.019Ohm Logic Level N-Ch
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUF76432P3 HUF76432P3%2CS3S.pdf
Hersteller: onsemi / Fairchild
MOSFET 55a 60V 0.019Ohm Logic Level N-Ch
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH