HUFA75337S3ST Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1775 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 175W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 392+ | 1.24 EUR |
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Technische Details HUFA75337S3ST Fairchild Semiconductor
Description: MOSFET N-CH 55V 75A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1775 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 20 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 175W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk.