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HUFA76407DK8T-F085

HUFA76407DK8T-F085 onsemi

huf76407dk_f085-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.1 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details HUFA76407DK8T-F085 onsemi

Description: MOSFET 2N-CH 60V 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V, Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V, Drain to Source Voltage (Vdss): 60V, Power - Max: 2.5W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.

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HUFA76407DK8T-F085 HUFA76407DK8T-F085 onsemi huf76407dk_f085-d.pdf MOSFETs 60V Dual N-Channel LogicLevel PwrMOSFET
auf Bestellung 2296 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.75 EUR
10+2.43 EUR
100+1.66 EUR
500+1.33 EUR
1000+1.27 EUR
2500+1.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
HUFA76407DK8T-F085 HUFA76407DK8T-F085 onsemi huf76407dk_f085-d.pdf Description: MOSFET 2N-CH 60V 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3141 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.75 EUR
10+2.41 EUR
100+1.65 EUR
500+1.32 EUR
1000+1.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
HUFA76407DK8T-F085 huf76407dk_f085-d.pdf
HUFA76407DK8T-F085
Hersteller: onsemi
MOSFETs 60V Dual N-Channel LogicLevel PwrMOSFET
auf Bestellung 2296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.75 EUR
10+2.43 EUR
100+1.66 EUR
500+1.33 EUR
1000+1.27 EUR
2500+1.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
HUFA76407DK8T-F085 huf76407dk_f085-d.pdf
HUFA76407DK8T-F085
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.75 EUR
10+2.41 EUR
100+1.65 EUR
500+1.32 EUR
1000+1.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH