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HUFA76407DK8T-F085 onsemi


huf76407dk_f085-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.31 EUR
Mindestbestellmenge: 2500 Stücke
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Lieferzeit: 10-14 Tag (e)
Mindestmenge: 2500 Stücke
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Technische Details HUFA76407DK8T-F085 onsemi

Description: MOSFET 2N-CH 60V 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 60V, Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V, Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Qualification: AEC-Q101.

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HUFA76407DK8T-F085 HUFA76407DK8T-F085 onsemi huf76407dk_f085-d.pdf MOSFETs 60V Dual N-Channel LogicLevel PwrMOSFET
auf Bestellung 2296 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.46 EUR
10+2.89 EUR
100+1.98 EUR
500+1.58 EUR
1000+1.51 EUR
2500+1.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
HUFA76407DK8T-F085 HUFA76407DK8T-F085 onsemi huf76407dk_f085-d.pdf Description: MOSFET 2N-CH 60V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3141 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.46 EUR
10+2.87 EUR
100+1.96 EUR
500+1.57 EUR
1000+1.55 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HUFA76407DK8T-F085 huf76407dk_f085-d.pdf
Hersteller: onsemi
MOSFETs 60V Dual N-Channel LogicLevel PwrMOSFET
auf Bestellung 2296 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.46 EUR
10+2.89 EUR
100+1.98 EUR
500+1.58 EUR
1000+1.51 EUR
2500+1.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
HUFA76407DK8T-F085 huf76407dk_f085-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3141 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.46 EUR
10+2.87 EUR
100+1.96 EUR
500+1.57 EUR
1000+1.55 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH