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HUFA76429D3

HUFA76429D3 onsemi / Fairchild

HUFA76429D3_D-3006591.pdf
Hersteller: onsemi / Fairchild
MOSFET 20a 60V 0.027 Ohm Logic Level N-Ch
auf Bestellung 4876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4 EUR
10+3.61 EUR
25+3.4 EUR
100+2.9 EUR
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Technische Details HUFA76429D3 onsemi / Fairchild

Description: MOSFET N-CH 60V 20A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.

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HUFA76429D3 HUFA76429D3 Hersteller : onsemi Description: MOSFET N-CH 60V 20A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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Im Einkaufswagen  Stück im Wert von  UAH