IAUA200N04S5N010 Infineon Technologies

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W, Type of transistor: N-MOSFET, Technology: OptiMOS™ 5, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 200A, Pulsed drain current: 800A, Power dissipation: 167W, Case: PG-HSOF-5, Gate-source voltage: ±20V, On-state resistance: 1mΩ, Mounting: SMD, Gate charge: 132nC, Kind of package: reel; tape, Kind of channel: enhancement, Application: automotive industry.