IAUA250N04S6N008AUMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 2+ | 2.73 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.65 EUR |
| 2000+ | 1.63 EUR |
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Technische Details IAUA250N04S6N008AUMA1 Infineon Technologies
Description: OPTIMOS POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 7088 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Part Status: Active, Supplier Device Package: PG-HSOF-5-1, Vgs(th) (Max) @ Id: 3V @ 90µA, Power Dissipation (Max): 172W (Tc), Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 51A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 5-PowerSFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote IAUA250N04S6N008AUMA1 nach Preis ab 1.64 EUR bis 2.8 EUR
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IAUA250N04S6N008AUMA1 | Infineon Technologies |
 Description: OPTIMOS POWER MOSFETFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 7088 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active Supplier Device Package: PG-HSOF-5-1 Vgs(th) (Max) @ Id: 3V @ 90µA Power Dissipation (Max): 172W (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Ta) |
auf Bestellung 1950 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUA250N04S6N008AUMA1 |
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Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFET
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7088 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-5-1
Vgs(th) (Max) @ Id: 3V @ 90µA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta)
Description: OPTIMOS POWER MOSFET
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7088 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-5-1
Vgs(th) (Max) @ Id: 3V @ 90µA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta)
auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.8 EUR |
| 10+ | 2.23 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.77 EUR |
| 1000+ | 1.64 EUR |