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Technische Details IAUC100N04S6L020 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A, Case: PG-TDSON-8, Mounting: SMD, Kind of package: reel; tape, Pulsed drain current: 400A, Power dissipation: 75W, Gate charge: 46nC, Polarisation: unipolar, Technology: OptiMOS™ 6, Drain current: 100A, Kind of channel: enhancement, Drain-source voltage: 40V, Type of transistor: N-MOSFET, Gate-source voltage: ±16V, On-state resistance: 2.7mΩ.
Weitere Produktangebote IAUC100N04S6L020
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IAUC100N04S6L020ATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 400A Power dissipation: 75W Gate charge: 46nC Polarisation: unipolar Technology: OptiMOS™ 6 Drain current: 100A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 2.7mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IAUC100N04S6L020ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 400A
Power dissipation: 75W
Gate charge: 46nC
Polarisation: unipolar
Technology: OptiMOS™ 6
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 400A
Power dissipation: 75W
Gate charge: 46nC
Polarisation: unipolar
Technology: OptiMOS™ 6
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH