IAUC60N04S6N031H Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 50+ | 3.5 EUR |
| 52+ | 3.32 EUR |
| 100+ | 3.14 EUR |
| 250+ | 2.98 EUR |
| 500+ | 2.84 EUR |
| 1000+ | 2.74 EUR |
| 2500+ | 2.62 EUR |
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Technische Details IAUC60N04S6N031H Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W, Type of transistor: N-MOSFET, Technology: OptiMOS™ 6, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 22A, Pulsed drain current: 311A, Power dissipation: 75W, Case: PG-TDSON-8, Gate-source voltage: ±20V, On-state resistance: 3.6mΩ, Mounting: SMD, Gate charge: 30nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote IAUC60N04S6N031H
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IAUC60N04S6N031H | Infineon Technologies | MOSFET_(20V 40V) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IAUC60N04S6N031HATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 311A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IAUC60N04S6N031H |
Hersteller: Infineon Technologies
MOSFET_(20V 40V)
MOSFET_(20V 40V)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUC60N04S6N031HATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH