| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.2 EUR |
| 10+ | 0.86 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.68 EUR |
| 2500+ | 0.65 EUR |
| 5000+ | 0.64 EUR |
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Technische Details IAUCN04S7L028ATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Drain to Source Voltage (Vdss): 40 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PG-TDSON-8-33, Current - Continuous Drain (Id) @ 25°C: 100A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN.
Weitere Produktangebote IAUCN04S7L028ATMA1 nach Preis ab 0.73 EUR bis 2.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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IAUCN04S7L028ATMA1 | Infineon Technologies |
 Description: MOSFET_(20V 40V)Drain to Source Voltage (Vdss): 40 V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PG-TDSON-8-33 Current - Continuous Drain (Id) @ 25°C: 100A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 |
auf Bestellung 5751 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUCN04S7L028ATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Drain to Source Voltage (Vdss): 40 V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PG-TDSON-8-33 Current - Continuous Drain (Id) @ 25°C: 100A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IAUCN04S7L028ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-33
Current - Continuous Drain (Id) @ 25°C: 100A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-33
Current - Continuous Drain (Id) @ 25°C: 100A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
auf Bestellung 5751 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.67 EUR |
| 13+ | 1.67 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.79 EUR |
| 2000+ | 0.73 EUR |
| IAUCN04S7L028ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-33
Current - Continuous Drain (Id) @ 25°C: 100A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-33
Current - Continuous Drain (Id) @ 25°C: 100A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)