IAUCN08S7N013ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-53
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V
Current - Continuous Drain (Id) @ 25°C: 274A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Technische Details IAUCN08S7N013ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V(, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Grade: Automotive, Supplier Device Package: PG-TDSON-8-53, Vgs(th) (Max) @ Id: 3.2V @ 130µA, Power Dissipation (Max): 219W (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V, Current - Continuous Drain (Id) @ 25°C: 274A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IAUCN08S7N013ATMA1 nach Preis ab 2.75 EUR bis 6.49 EUR
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IAUCN08S7N013ATMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V( Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Grade: Automotive Supplier Device Package: PG-TDSON-8-53 Vgs(th) (Max) @ Id: 3.2V @ 130µA Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V Current - Continuous Drain (Id) @ 25°C: 274A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 13378 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUCN08S7N013ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-53
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V
Current - Continuous Drain (Id) @ 25°C: 274A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET_(75V 120V(
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-53
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V
Current - Continuous Drain (Id) @ 25°C: 274A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 13378 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.49 EUR |
| 10+ | 4.28 EUR |
| 100+ | 3.02 EUR |
| 500+ | 2.75 EUR |