IAUMN08S5N012GAUMA1 INFINEON
Hersteller: INFINEON
Description: INFINEON - IAUMN08S5N012GAUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.0012 ohm, HSOG, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 300A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.8V
euEccn: NLR
Verlustleistung: 325W
Bauform - Transistor: HSOG
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0012ohm
SVHC: No SVHC (27-Jun-2024)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 11.45 EUR |
| 27+ | 8.7 EUR |
| 100+ | 7.02 EUR |
| 500+ | 6.45 EUR |
| 1000+ | 5.94 EUR |
Produktrezensionen
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Technische Details IAUMN08S5N012GAUMA1 INFINEON
Description: INFINEON - IAUMN08S5N012GAUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 300 A, 0.0012 ohm, HSOG, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 80V, rohsCompliant: YES, Dauer-Drainstrom Id: 300A, hazardous: false, rohsPhthalatesCompliant: TBA, Qualifikation: AEC-Q101, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.8V, euEccn: NLR, Verlustleistung: 325W, Bauform - Transistor: HSOG, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0012ohm, SVHC: No SVHC (27-Jun-2024).
Weitere Produktangebote IAUMN08S5N012GAUMA1 nach Preis ab 4.71 EUR bis 12.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IAUMN08S5N012GAUMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V( Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 13550 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Grade: Automotive Supplier Device Package: PG-HSOG-4-1 Vgs(th) (Max) @ Id: 3.8V @ 232µA Power Dissipation (Max): 325W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 1465 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUMN08S5N012GAUMA1 | Infineon Technologies |
MOSFETs MOSFET_(75V 120V( |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUMN08S5N012GAUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 13550 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOG-4-1
Vgs(th) (Max) @ Id: 3.8V @ 232µA
Power Dissipation (Max): 325W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET_(75V 120V(
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 13550 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOG-4-1
Vgs(th) (Max) @ Id: 3.8V @ 232µA
Power Dissipation (Max): 325W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.5 EUR |
| 10+ | 7.69 EUR |
| 100+ | 5.53 EUR |
| 500+ | 5.08 EUR |
| IAUMN08S5N012GAUMA1 |
|
Hersteller: Infineon Technologies
MOSFETs MOSFET_(75V 120V(
MOSFETs MOSFET_(75V 120V(
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.29 EUR |
| 10+ | 8.04 EUR |
| 100+ | 5.93 EUR |
| 500+ | 5.28 EUR |
| 1000+ | 4.71 EUR |