IAUS260N10S5N019TATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 10.54 EUR |
| 10+ | 6.92 EUR |
| 100+ | 5.09 EUR |
| 500+ | 4.52 EUR |
| 1000+ | 4.01 EUR |
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Technische Details IAUS260N10S5N019TATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 260A HDSOP-16-2, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260A (Tj), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 210µA, Supplier Device Package: PG-HDSOP-16-2, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUS260N10S5N019TATMA1 nach Preis ab 5.43 EUR bis 11.25 EUR
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IAUS260N10S5N019TATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 260A HDSOP-16-2Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tj) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 210µA Supplier Device Package: PG-HDSOP-16-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 471 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUS260N10S5N019TATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 260A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tj)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 260A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tj)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 471 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.25 EUR |
| 10+ | 7.53 EUR |
| 100+ | 5.43 EUR |



