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IAUT260N10S5N019 Infineon


Hersteller: Infineon

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Technische Details IAUT260N10S5N019 Infineon

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 260A, Case: PG-HSOF-8, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Technology: OptiMOS™ 5, Gate-source voltage: ±20V, On-state resistance: 1.9mΩ, Power dissipation: 300W, Gate charge: 54nC.

Weitere Produktangebote IAUT260N10S5N019

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IAUT260N10S5N019ATMA1 IAUT260N10S5N019ATMA1 INFINEON TECHNOLOGIES IAUT260N10S5N019.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Power dissipation: 300W
Gate charge: 54nC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUT260N10S5N019ATMA1 IAUT260N10S5N019.pdf
IAUT260N10S5N019ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Power dissipation: 300W
Gate charge: 54nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH