IAUT260N10S5N019ATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 260A 8HSOF, Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-HSOF-8-1, Vgs(th) (Max) @ Id: 3.8V @ 210µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 260A (Tc), FET Type: N-Channel, Qualification: AEC-Q101, Grade: Automotive, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).