IAUT300N08S5N012 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 18+ | 10.26 EUR |
| 25+ | 9.67 EUR |
| 50+ | 9.1 EUR |
| 100+ | 8.6 EUR |
| 250+ | 8.21 EUR |
| 500+ | 7.87 EUR |
| 1000+ | 7.5 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
18 Stücke
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Technische Details IAUT300N08S5N012 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8, Mounting: SMD, Power dissipation: 375W, Gate charge: 178nC, Polarisation: unipolar, Technology: OptiMOS™ 5, Drain current: 300A, Kind of channel: enhancement, Drain-source voltage: 80V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: PG-HSOF-8, On-state resistance: 1.2mΩ.
Weitere Produktangebote IAUT300N08S5N012
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IAUT300N08S5N012ATMA2 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8 Mounting: SMD Power dissipation: 375W Gate charge: 178nC Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 300A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-HSOF-8 On-state resistance: 1.2mΩ |
auf Bestellung 1374 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IAUT300N08S5N012ATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Mounting: SMD
Power dissipation: 375W
Gate charge: 178nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 300A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 1.2mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Mounting: SMD
Power dissipation: 375W
Gate charge: 178nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 300A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 1.2mΩ
auf Bestellung 1374 Stücke:
Lieferzeit 14-21 Tag (e)