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IAUTN15S6N025TATMA1

IAUTN15S6N025TATMA1 Infineon Technologies

Infineon-IAUTN15S6N025T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e0197399048cf5802
Hersteller: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 245A (Tj)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 1678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.32 EUR
10+10.35 EUR
25+9.61 EUR
100+8.8 EUR
250+8.41 EUR
500+8.17 EUR
Mindestbestellmenge: 2
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Technische Details IAUTN15S6N025TATMA1 Infineon Technologies

Description: MOSFET_(120V 300V), Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 245A (Tj), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-HDSOP-16-2, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V, Qualification: AEC-Q101.

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IAUTN15S6N025TATMA1 IAUTN15S6N025TATMA1 Hersteller : Infineon Technologies Infineon_IAUTN15S6N025T_DataSheet_v01_00_EN.pdf MOSFETs 150 V, N-Ch, 2.5 mOhms max, Automotive MOSFET, TOLT (10x15)
auf Bestellung 2902 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.48 EUR
10+9.73 EUR
100+8.52 EUR
500+8.4 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IAUTN15S6N025TATMA1 IAUTN15S6N025TATMA1 Hersteller : Infineon Technologies Infineon-IAUTN15S6N025T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e0197399048cf5802 Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 245A (Tj)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH