IAUTN15S6N038TATMA1 Infineon Technologies
Hersteller: Infineon Technologies
MOSFETs 150 V, N-Ch, 3.8 mOhms max, Automotive MOSFET, TOLT (10x15)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.67 EUR |
| 10+ | 9.04 EUR |
| 100+ | 7.88 EUR |
| 500+ | 7.79 EUR |
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10-14 Tag (e)
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Technische Details IAUTN15S6N038TATMA1 Infineon Technologies
Description: MOSFET_(120V 300V), Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tj), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 85A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 166µA, Supplier Device Package: PG-HDSOP-16-2, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUTN15S6N038TATMA1 nach Preis ab 8.2 EUR bis 16.37 EUR
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IAUTN15S6N038TATMA1 | Infineon Technologies |
Description: MOSFET_(120V 300V) Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 85A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 166µA Supplier Device Package: PG-HDSOP-16-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V Qualification: AEC-Q101 |
auf Bestellung 1290 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUTN15S6N038TATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 85A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
Qualification: AEC-Q101
Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 85A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 1290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.37 EUR |
| 10+ | 11.17 EUR |
| 50+ | 8.95 EUR |
| 100+ | 8.23 EUR |
| 500+ | 8.2 EUR |