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IAUTN15S6N038TATMA1

IAUTN15S6N038TATMA1 Infineon Technologies

Infineon-IAUTN15S6N038T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fdc7cc9b7125
Hersteller: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 85A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 1690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.51 EUR
10+8.11 EUR
25+7.5 EUR
100+6.84 EUR
250+6.53 EUR
500+6.34 EUR
Mindestbestellmenge: 2
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Technische Details IAUTN15S6N038TATMA1 Infineon Technologies

Description: MOSFET_(120V 300V), Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tj), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 85A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 166µA, Supplier Device Package: PG-HDSOP-16-2, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V, Qualification: AEC-Q101.

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IAUTN15S6N038TATMA1 IAUTN15S6N038TATMA1 Hersteller : Infineon Technologies Infineon_IAUTN15S6N038T_DataSheet_v01_00_EN.pdf MOSFETs 150 V, N-Ch, 3.8 mOhms max, Automotive MOSFET, TOLT (10x15)
auf Bestellung 1783 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.65 EUR
10+7.6 EUR
100+6.62 EUR
500+6.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IAUTN15S6N038TATMA1 IAUTN15S6N038TATMA1 Hersteller : Infineon Technologies Infineon-IAUTN15S6N038T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fdc7cc9b7125 Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 85A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH