IDB06S60CATMA2 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE SIL CARB 600V 6A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO263-3-2
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
auf Bestellung 38373 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 127+ | 3.97 EUR |
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Technische Details IDB06S60CATMA2 Infineon Technologies
Description: DIODE SIL CARB 600V 6A TO263-3-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 280pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: PG-TO263-3-2, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 80 µA @ 600 V.
Weitere Produktangebote IDB06S60CATMA2
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IDB06S60CATMA2 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IDB06S60CATMA2 - IDB06S60 - COOLSIC SCHOTTKY DIODE euEccn: TBC hazardous: true productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 38373 Stücke: Lieferzeit 14-21 Tag (e) |
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IDB06S60CATMA2 | Hersteller : Infineon Technologies |
Diode Schottky 600V 6A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IDB06S60CATMA2 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 600V 6A TO263-3-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 280pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: PG-TO263-3-2 Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 80 µA @ 600 V |
Produkt ist nicht verfügbar |