IDB23E60ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE GP 600V 41A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 41A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 23 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 430+ | 1.14 EUR |
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Technische Details IDB23E60ATMA1 Infineon Technologies
Description: DIODE GP 600V 41A TO263-3-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 120 ns, Technology: Standard, Current - Average Rectified (Io): 41A, Supplier Device Package: PG-TO263-3-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 23 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
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IDB23E60ATMA1 | Hersteller : Infineon Technologies |
Diode Switching 600V 41A 3-Pin(2+Tab) TO-263 |
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IDB23E60ATMA1 | Hersteller : Infineon Technologies |
Description: DIODE GP 600V 41A TO263-3-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Standard Current - Average Rectified (Io): 41A Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 23 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
Produkt ist nicht verfügbar |