IDC08S120EX7SA1 Infineon Technologies

Description: DIODE SIL CARB 1.2KV 7.5A WAFER, Current - Reverse Leakage @ Vr: 180 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Obsolete, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: Sawn on foil, Current - Average Rectified (Io): 7.5A, Capacitance @ Vr, F: 380pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk.