IDD04SG60CXTMA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 4A PGTO2523
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details IDD04SG60CXTMA2 Infineon Technologies
Description: DIODE SIL CARB 600V 4A PGTO2523, Current - Reverse Leakage @ Vr: 25 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO252-3, Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 80pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote IDD04SG60CXTMA2 nach Preis ab 1.42 EUR bis 4.86 EUR
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IDD04SG60CXTMA2 | Infineon Technologies |
SiC Schottky Diodes SIC DIODES |
auf Bestellung 1095 Stücke: Lieferzeit 10-14 Tag (e) |
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IDD04SG60CXTMA2 | Infineon Technologies |
Description: DIODE SIL CARB 600V 4A PGTO2523 Current - Reverse Leakage @ Vr: 25 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 4 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO252-3 Current - Average Rectified (Io): 4A Capacitance @ Vr, F: 80pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 8786 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IDD04SG60CXTMA2 |
|
Hersteller: Infineon Technologies
SiC Schottky Diodes SIC DIODES
SiC Schottky Diodes SIC DIODES
auf Bestellung 1095 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.51 EUR |
| 10+ | 2.92 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.64 EUR |
| 1000+ | 1.53 EUR |
| 2500+ | 1.42 EUR |
| IDD04SG60CXTMA2 |
|
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 4A PGTO2523
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE SIL CARB 600V 4A PGTO2523
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 8786 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.86 EUR |
| 10+ | 2.91 EUR |
| 100+ | 2.17 EUR |
| 500+ | 1.75 EUR |
| 1000+ | 1.62 EUR |