IDD06SG60CXTMA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2523
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details IDD06SG60CXTMA2 Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2523, Current - Reverse Leakage @ Vr: 50 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO252-3, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 130pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote IDD06SG60CXTMA2 nach Preis ab 1.92 EUR bis 6.55 EUR
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IDD06SG60CXTMA2 | Infineon Technologies |
SiC Schottky Diodes SIC DIODES |
auf Bestellung 2045 Stücke: Lieferzeit 10-14 Tag (e) |
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IDD06SG60CXTMA2 | Infineon Technologies |
Description: DIODE SIL CARB 600V 6A PGTO2523 Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO252-3 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 130pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A |
auf Bestellung 9208 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IDD06SG60CXTMA2 |
|
Hersteller: Infineon Technologies
SiC Schottky Diodes SIC DIODES
SiC Schottky Diodes SIC DIODES
auf Bestellung 2045 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.6 EUR |
| 10+ | 3.33 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.27 EUR |
| 1000+ | 2.16 EUR |
| 2500+ | 1.92 EUR |
| IDD06SG60CXTMA2 |
|
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2523
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Description: DIODE SIL CARB 600V 6A PGTO2523
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
auf Bestellung 9208 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.55 EUR |
| 10+ | 4.29 EUR |
| 100+ | 3.01 EUR |
| 500+ | 2.46 EUR |
| 1000+ | 2.29 EUR |