IDD09E60BUMA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - IDD09E60BUMA1 - IDD09E60 - SILICON POWER DIODE
euEccn: TBC
hazardous: false
productTraceability: Yes-Date/Lot Code
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details IDD09E60BUMA1 ROCHESTER ELECTRONICS
Description: DIODE GP 600V 19.3A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Current - Average Rectified (Io): 19.3A, Supplier Device Package: PG-TO252-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 9 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Weitere Produktangebote IDD09E60BUMA1
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IDD09E60BUMA1 | Hersteller : Infineon Technologies |
Description: DIODE GP 600V 19.3A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 19.3A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 9 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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