IDD09SG60CXTMA2 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 8.1 EUR |
| 10+ | 7.09 EUR |
| 100+ | 6.16 EUR |
| 250+ | 5.88 EUR |
| 500+ | 5.54 EUR |
| 1000+ | 5.03 EUR |
| 2500+ | 4.72 EUR |
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Technische Details IDD09SG60CXTMA2 Infineon Technologies
Description: DIODE SIL CARB 600V 9A PGTO2523, Current - Reverse Leakage @ Vr: 80 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO252-3, Current - Average Rectified (Io): 9A, Capacitance @ Vr, F: 280pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote IDD09SG60CXTMA2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IDD09SG60CXTMA2 | Infineon Technologies |
 Description: DIODE SIL CARB 600V 9A PGTO2523Current - Reverse Leakage @ Vr: 80 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO252-3 Current - Average Rectified (Io): 9A Capacitance @ Vr, F: 280pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IDD09SG60CXTMA2 |
|
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 9A PGTO2523
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 9A
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARB 600V 9A PGTO2523
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 9A
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH