IDDD16G65C6XTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 43A PGHDSOP101
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 43A
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
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Technische Details IDDD16G65C6XTMA1 Infineon Technologies
Description: DIODE SIC 650V 43A PGHDSOP101, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-HDSOP-10-1, Current - Average Rectified (Io): 43A, Capacitance @ Vr, F: 783pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 10-PowerSOP Module, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 53 µA @ 420 V.
Weitere Produktangebote IDDD16G65C6XTMA1 nach Preis ab 5.03 EUR bis 13.83 EUR
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IDDD16G65C6XTMA1 | Infineon Technologies |
Schottky Diodes & Rectifiers SIC DIODES |
auf Bestellung 941 Stücke: Lieferzeit 10-14 Tag (e) |
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IDDD16G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 43A PGHDSOP101 Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 783pF @ 1V, 1MHz Current - Average Rectified (Io): 43A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 53 µA @ 420 V |
auf Bestellung 3735 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IDDD16G65C6XTMA1 |
|
Hersteller: Infineon Technologies
Schottky Diodes & Rectifiers SIC DIODES
Schottky Diodes & Rectifiers SIC DIODES
auf Bestellung 941 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.96 EUR |
| 10+ | 6.9 EUR |
| 100+ | 5.88 EUR |
| 250+ | 5.83 EUR |
| 500+ | 5.49 EUR |
| 1700+ | 5.03 EUR |
| IDDD16G65C6XTMA1 |
|
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 43A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
Description: DIODE SIC 650V 43A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
auf Bestellung 3735 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.83 EUR |
| 10+ | 9.37 EUR |
| 100+ | 6.83 EUR |
| 500+ | 5.75 EUR |