IDDD16G65C6XTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE SIC 650V 43A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 107+ | 4.75 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IDDD16G65C6XTMA1 Infineon Technologies
Description: DIODE SIC 650V 43A PGHDSOP101, Packaging: Tape & Reel (TR), Package / Case: 10-PowerSOP Module, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 783pF @ 1V, 1MHz, Current - Average Rectified (Io): 43A, Supplier Device Package: PG-HDSOP-10-1, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Current - Reverse Leakage @ Vr: 53 µA @ 420 V.
Weitere Produktangebote IDDD16G65C6XTMA1 nach Preis ab 4.46 EUR bis 11.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IDDD16G65C6XTMA1 | Hersteller : Infineon Technologies |
Diode Schottky SiC 650V 43A 10-Pin HDSOP EP T/R |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
IDDD16G65C6XTMA1 | Hersteller : Infineon Technologies |
Diode Schottky SiC 650V 43A 10-Pin HDSOP EP T/R |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
IDDD16G65C6XTMA1 | Hersteller : Infineon Technologies |
Schottky Diodes & Rectifiers SIC DIODES |
auf Bestellung 941 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
IDDD16G65C6XTMA1 | Hersteller : Infineon Technologies |
Diode Schottky SiC 650V 43A 10-Pin HDSOP EP T/R |
auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
IDDD16G65C6XTMA1 | Hersteller : Infineon Technologies |
Diode Schottky SiC 650V 43A 10-Pin HDSOP EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
IDDD16G65C6XTMA1 | Hersteller : Infineon Technologies |
Diode Schottky SiC 650V 43A 10-Pin HDSOP EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| IDDD16G65C6XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 16A Technology: CoolSiC™ 5G; SiC Power dissipation: 141W Case: PG-HDSOP-10-1 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 650V Leakage current: 1.6µA Semiconductor structure: single diode Load current: 16A Max. forward voltage: 1.25V Max. forward impulse current: 65A Type of diode: Schottky rectifying Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
IDDD16G65C6XTMA1 | Hersteller : Infineon Technologies |
Description: DIODE SIC 650V 43A PGHDSOP101 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 783pF @ 1V, 1MHz Current - Average Rectified (Io): 43A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 53 µA @ 420 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
IDDD16G65C6XTMA1 | Hersteller : Infineon Technologies |
Description: DIODE SIC 650V 43A PGHDSOP101 Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 783pF @ 1V, 1MHz Current - Average Rectified (Io): 43A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 53 µA @ 420 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
| IDDD16G65C6XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 16A Technology: CoolSiC™ 5G; SiC Power dissipation: 141W Case: PG-HDSOP-10-1 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 650V Leakage current: 1.6µA Semiconductor structure: single diode Load current: 16A Max. forward voltage: 1.25V Max. forward impulse current: 65A Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |