IDFW80C65D1XKSA1 Infineon Technologies
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 10.16 EUR |
| 10+ | 8.54 EUR |
| 100+ | 6.9 EUR |
| 240+ | 6.51 EUR |
| 480+ | 6.14 EUR |
| 1200+ | 5.26 EUR |
| 2640+ | 4.95 EUR |
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Technische Details IDFW80C65D1XKSA1 Infineon Technologies
Description: DIODE GP 650V 74A TO247-3-AI, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 73 ns, Technology: Standard, Current - Average Rectified (Io): 74A, Supplier Device Package: PG-TO247-3-AI, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote IDFW80C65D1XKSA1 nach Preis ab 11.71 EUR bis 12.97 EUR
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IDFW80C65D1XKSA1 | Hersteller : Infineon Technologies |
 Description: DIODE GP 650V 74A TO247-3-AIPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 73 ns Technology: Standard Current - Average Rectified (Io): 74A Supplier Device Package: PG-TO247-3-AI Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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