IDH03G65C5XKSA2 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 2.92 EUR |
| 10+ | 2.45 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.36 EUR |
| 5000+ | 1.3 EUR |
| 10000+ | 1.27 EUR |
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Technische Details IDH03G65C5XKSA2 Infineon Technologies
Description: DIODE SIL CARB 650V 3A TO220-2-1, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Not For New Designs, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO220-2-1, Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 100pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote IDH03G65C5XKSA2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IDH03G65C5XKSA2 | Infineon Technologies |
 Description: DIODE SIL CARB 650V 3A TO220-2-1Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Not For New Designs Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO220-2-1 Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 100pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IDH03G65C5XKSA2 |
|
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 3A TO220-2-1
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Not For New Designs
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 650V 3A TO220-2-1
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Not For New Designs
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH