IDH03SG60C Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 3A TO220-2-2
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
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Technische Details IDH03SG60C Infineon Technologies
Description: DIODE SIL CARB 600V 3A TO220-2-2, Current - Reverse Leakage @ Vr: 15 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO220-2-2, Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 60pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Bulk.
Weitere Produktangebote IDH03SG60C
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IDH03SG60C | Infineon Technologies |
Schottky Diodes & Rectifiers SIC DIODEN |
auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IDH03SG60C |
|
Hersteller: Infineon Technologies
Schottky Diodes & Rectifiers SIC DIODEN
Schottky Diodes & Rectifiers SIC DIODEN
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)