IDH04SG60CXKSA2 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 4.44 EUR |
| 10+ | 2.22 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.8 EUR |
| 1000+ | 1.4 EUR |
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Technische Details IDH04SG60CXKSA2 Infineon Technologies
Description: DIODE SIL CARB 600V 4A PGTO2201, Current - Reverse Leakage @ Vr: 25 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO220-2-1, Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 80pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote IDH04SG60CXKSA2 nach Preis ab 2.58 EUR bis 5.17 EUR
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IDH04SG60CXKSA2 | Infineon Technologies |
 Description: DIODE SIL CARB 600V 4A PGTO2201Current - Reverse Leakage @ Vr: 25 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 4 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO220-2-1 Current - Average Rectified (Io): 4A Capacitance @ Vr, F: 80pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 84 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDH04SG60CXKSA2 | Infineon |
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auf Bestellung 750 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IDH04SG60CXKSA2 |
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Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 4A PGTO2201
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 600V 4A PGTO2201
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 80pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.17 EUR |
| 50+ | 2.58 EUR |
| IDH04SG60CXKSA2 |
|
Hersteller: Infineon
auf Bestellung 750 Stücke:
Lieferzeit 21-28 Tag (e)