IDH05G120C5XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1200V 5A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
| Anzahl | Preis |
|---|---|
| 4+ | 5.83 EUR |
| 50+ | 2.95 EUR |
| 100+ | 2.68 EUR |
| 500+ | 2.19 EUR |
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Technische Details IDH05G120C5XKSA1 Infineon Technologies
Description: DIODE SIL CARB 1200V 5A PGTO2201, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 301pF @ 1V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: PG-TO220-2-1, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A, Current - Reverse Leakage @ Vr: 33 µA @ 1200 V.
Weitere Produktangebote IDH05G120C5XKSA1 nach Preis ab 2.02 EUR bis 6 EUR
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IDH05G120C5XKSA1 | Infineon Technologies |
SiC Schottky Diodes SIC DISCRETE |
auf Bestellung 817 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDH05G120C5XKSA1 |
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Hersteller: Infineon Technologies
SiC Schottky Diodes SIC DISCRETE
SiC Schottky Diodes SIC DISCRETE
auf Bestellung 817 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.73 EUR |
| 500+ | 2.22 EUR |
| 1000+ | 2.02 EUR |