Technische Details IDH06G65C6XKSA1 Infineon Technologies
Description: DIODE SIL CARB 650V 16A PGTO220, Current - Reverse Leakage @ Vr: 20 µA @ 420 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO220-2, Current - Average Rectified (Io): 16A, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Capacitance @ Vr, F: 302pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky.
Weitere Produktangebote IDH06G65C6XKSA1 nach Preis ab 1.01 EUR bis 5.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDH06G65C6XKSA1 | Infineon Technologies |
Diode Schottky SiC 650V 16A 2-Pin(2+Tab) TO-220 Tube |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IDH06G65C6XKSA1 | Infineon Technologies |
Diode Schottky SiC 650V 16A 2-Pin(2+Tab) TO-220 Tube |
auf Bestellung 268 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IDH06G65C6XKSA1 | Infineon Technologies |
Diode Schottky SiC 650V 16A 2-Pin(2+Tab) TO-220 Tube |
auf Bestellung 847 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IDH06G65C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; Ir: 46uA Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.25V Max. forward impulse current: 30A Leakage current: 46µA Power dissipation: 54W Kind of package: tube Heatsink thickness: 1.17...1.37mm |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IDH06G65C6XKSA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 16A PGTO220Current - Reverse Leakage @ Vr: 20 µA @ 420 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO220-2 Current - Average Rectified (Io): 16A Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Capacitance @ Vr, F: 302pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky |
auf Bestellung 341 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
IDH06G65C6XKSA1 | Infineon Technologies |
SiC Schottky Diodes SIC DIODES |
auf Bestellung 537 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
IDH06G65C6XKSA1 | Infineon Technologies |
Diode Schottky SiC 650V 16A 2-Pin(2+Tab) TO-220 Tube |
auf Bestellung 268 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 268 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IDH06G65C6XKSA1 |
![]() |
Hersteller: Infineon Technologies
Diode Schottky SiC 650V 16A 2-Pin(2+Tab) TO-220 Tube
Diode Schottky SiC 650V 16A 2-Pin(2+Tab) TO-220 Tube
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 122+ | 1.2 EUR |
| 133+ | 1.06 EUR |
| 135+ | 1.01 EUR |
| IDH06G65C6XKSA1 |
![]() |
Hersteller: Infineon Technologies
Diode Schottky SiC 650V 16A 2-Pin(2+Tab) TO-220 Tube
Diode Schottky SiC 650V 16A 2-Pin(2+Tab) TO-220 Tube
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 268+ | 1.93 EUR |
| IDH06G65C6XKSA1 |
![]() |
Hersteller: Infineon Technologies
Diode Schottky SiC 650V 16A 2-Pin(2+Tab) TO-220 Tube
Diode Schottky SiC 650V 16A 2-Pin(2+Tab) TO-220 Tube
auf Bestellung 847 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 56+ | 2.63 EUR |
| 100+ | 2.34 EUR |
| 500+ | 1.94 EUR |
| IDH06G65C6XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; Ir: 46uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 46µA
Power dissipation: 54W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; Ir: 46uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 46µA
Power dissipation: 54W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 2.95 EUR |
| 50+ | 2.27 EUR |
| IDH06G65C6XKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 16A PGTO220
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2
Current - Average Rectified (Io): 16A
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Description: DIODE SIL CARB 650V 16A PGTO220
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2
Current - Average Rectified (Io): 16A
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
auf Bestellung 341 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.49 EUR |
| 50+ | 2.23 EUR |
| 100+ | 2.01 EUR |
| IDH06G65C6XKSA1 |
![]() |
Hersteller: Infineon Technologies
SiC Schottky Diodes SIC DIODES
SiC Schottky Diodes SIC DIODES
auf Bestellung 537 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.83 EUR |
| 10+ | 3.78 EUR |
| 100+ | 2.66 EUR |
| 500+ | 2.22 EUR |
| 1000+ | 2.06 EUR |
| 2500+ | 1.94 EUR |
| IDH06G65C6XKSA1 |
![]() |
Hersteller: Infineon Technologies
Diode Schottky SiC 650V 16A 2-Pin(2+Tab) TO-220 Tube
Diode Schottky SiC 650V 16A 2-Pin(2+Tab) TO-220 Tube
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)





