IDH06SG60CXKSA2 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 5.9 EUR |
| 10+ | 2.99 EUR |
| 100+ | 2.73 EUR |
| 500+ | 2.18 EUR |
| 1000+ | 2.06 EUR |
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Technische Details IDH06SG60CXKSA2 Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2201, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 130pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: PG-TO220-2-1, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Weitere Produktangebote IDH06SG60CXKSA2 nach Preis ab 6.88 EUR bis 6.88 EUR
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IDH06SG60CXKSA2 | Infineon Technologies |
 Description: DIODE SIL CARB 600V 6A PGTO2201Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDH06SG60CXKSA2 |
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Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 6A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.88 EUR |