IDH08G120C5XKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 7.16 EUR |
| 10+ | 3.56 EUR |
| 100+ | 3.27 EUR |
| 500+ | 3.01 EUR |
| 1000+ | 2.82 EUR |
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Technische Details IDH08G120C5XKSA1 Infineon Technologies
Description: DIODE SIC 1.2KV 22.8A PGTO2201, Current - Reverse Leakage @ Vr: 40 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO220-2-1, Current - Average Rectified (Io): 22.8A, Capacitance @ Vr, F: 365pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote IDH08G120C5XKSA1 nach Preis ab 3.34 EUR bis 7.27 EUR
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IDH08G120C5XKSA1 | Infineon Technologies |
 Description: DIODE SIC 1.2KV 22.8A PGTO2201Current - Reverse Leakage @ Vr: 40 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 8 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO220-2-1 Current - Average Rectified (Io): 22.8A Capacitance @ Vr, F: 365pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 419 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDH08G120C5XKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 22.8A PGTO2201
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 22.8A
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIC 1.2KV 22.8A PGTO2201
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 22.8A
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 419 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.27 EUR |
| 50+ | 3.69 EUR |
| 100+ | 3.34 EUR |