IDH08G65C5 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 76W; PG-TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Case: PG-TO220-2
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 1.6µA
Max. forward impulse current: 60A
Max. forward voltage: 1.8V
Power dissipation: 76W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 8A
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 76W; PG-TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Case: PG-TO220-2
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 1.6µA
Max. forward impulse current: 60A
Max. forward voltage: 1.8V
Power dissipation: 76W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 8A
Anzahl je Verpackung: 1 Stücke
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Technische Details IDH08G65C5 INFINEON TECHNOLOGIES
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 76W; PG-TO220-2, Type of diode: Schottky rectifying, Mounting: THT, Case: PG-TO220-2, Kind of package: tube, Semiconductor structure: single diode, Leakage current: 1.6µA, Max. forward impulse current: 60A, Max. forward voltage: 1.8V, Power dissipation: 76W, Technology: CoolSiC™ 5G; SiC, Max. off-state voltage: 650V, Heatsink thickness: 1.17...137mm, Load current: 8A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IDH08G65C5
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IDH08G65C5 | Hersteller : Infineon Technologies |
 Schottky Diodes & Rectifiers SIC DIODES |
Produkt ist nicht verfügbar |
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IDH08G65C5 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 76W; PG-TO220-2 Type of diode: Schottky rectifying Mounting: THT Case: PG-TO220-2 Kind of package: tube Semiconductor structure: single diode Leakage current: 1.6µA Max. forward impulse current: 60A Max. forward voltage: 1.8V Power dissipation: 76W Technology: CoolSiC™ 5G; SiC Max. off-state voltage: 650V Heatsink thickness: 1.17...137mm Load current: 8A |
Produkt ist nicht verfügbar |