IDH08G65C6 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 25+ | 7.2 EUR |
| 26+ | 6.79 EUR |
| 50+ | 6.39 EUR |
| 100+ | 6.03 EUR |
| 250+ | 5.77 EUR |
| 500+ | 5.52 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
25 Stücke
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Technische Details IDH08G65C6 Infineon Technologies
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; Ir: 62uA, Type of diode: Schottky rectifying, Technology: CoolSiC™ 5G; SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 8A, Semiconductor structure: single diode, Case: PG-TO220-2, Max. forward voltage: 1.25V, Max. forward impulse current: 37A, Leakage current: 62µA, Power dissipation: 63W, Kind of package: tube, Heatsink thickness: 1.17...1.37mm.
Weitere Produktangebote IDH08G65C6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IDH08G65C6XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; Ir: 62uA Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.25V Max. forward impulse current: 37A Leakage current: 62µA Power dissipation: 63W Kind of package: tube Heatsink thickness: 1.17...1.37mm |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IDH08G65C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; Ir: 62uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 37A
Leakage current: 62µA
Power dissipation: 63W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; Ir: 62uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 37A
Leakage current: 62µA
Power dissipation: 63W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)