IDH08S120AKSA1 INFINEON
Hersteller: INFINEON
Description: INFINEON - IDH08S120AKSA1 - Schottky-Diode, Siliziumkarbid, Baureihe thinQ 2G 1200V, einfach, 1.2kV, 7.5A, 27nC, TO-220
Periodische Sperrspannung Vrrm, max.: 1.2
Anzahl der Pins: 2 Pins
Bauform - Diode: TO-220
Diodenkonfiguration: Einfach
Sperrschichttemperatur Tj, max.: 175
Kapazitive Blindleistung Qc: 27
Kontinuierlicher Durchlassstrom If: 7.5
Produktpalette: thinQ 2G 1200V
SVHC: No SVHC (27-Jun-2018)
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Technische Details IDH08S120AKSA1 INFINEON
Description: DIODE SIC 1.2KV 7.5A TO220, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 380pF @ 1V, 1MHz, Current - Average Rectified (Io): 7.5A, Supplier Device Package: PG-TO220-2-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A, Current - Reverse Leakage @ Vr: 180 µA @ 1200 V.
Weitere Produktangebote IDH08S120AKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IDH08S120AKSA1 | Infineon Technologies |
Description: DIODE SIC 1.2KV 7.5A TO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 380pF @ 1V, 1MHz Current - Average Rectified (Io): 7.5A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A Current - Reverse Leakage @ Vr: 180 µA @ 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IDH08S120AKSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 7.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
Description: DIODE SIC 1.2KV 7.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH