IDH12G65C6XKSA1
Produktcode: 150354
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller:
Verschiedene Bauteile > Other components 3
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote IDH12G65C6XKSA1 nach Preis ab 2.73 EUR bis 8.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IDH12G65C6XKSA1 | Infineon Technologies |
SiC Schottky Diodes SIC DIODES |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
IDH12G65C6XKSA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 27A PGTO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 594pF @ 1V, 1MHz Current - Average Rectified (Io): 27A Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A Current - Reverse Leakage @ Vr: 40 µA @ 420 V |
auf Bestellung 268 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IDH12G65C6XKSA1 |
|
Hersteller: Infineon Technologies
SiC Schottky Diodes SIC DIODES
SiC Schottky Diodes SIC DIODES
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.27 EUR |
| 10+ | 3.38 EUR |
| 100+ | 3.34 EUR |
| 500+ | 2.76 EUR |
| 1000+ | 2.73 EUR |
| IDH12G65C6XKSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 27A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 27A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Description: DIODE SIL CARB 650V 27A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 27A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.5 EUR |
| 50+ | 4.43 EUR |
| 100+ | 4.04 EUR |