IDH12SG60C Infineon Technologies
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Technische Details IDH12SG60C Infineon Technologies
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; 125W; PG-TO220-2, Mounting: THT, Kind of package: tube, Technology: CoolSiC™ 3G; SiC, Power dissipation: 125W, Max. forward voltage: 1.8V, Load current: 12A, Max. forward impulse current: 59A, Max. off-state voltage: 600V, Leakage current: 1µA, Case: PG-TO220-2, Type of diode: Schottky rectifying, Semiconductor structure: single diode.
Weitere Produktangebote IDH12SG60C
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IDH12SG60C | Hersteller : Infineon Technologies |
 Description: DIODE SCHOTTKY 600V 12A TO220-2 |
auf Bestellung 286 Stücke: Lieferzeit 10-14 Tag (e) |
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IDH12SG60C | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; 125W; PG-TO220-2 Mounting: THT Kind of package: tube Technology: CoolSiC™ 3G; SiC Power dissipation: 125W Max. forward voltage: 1.8V Load current: 12A Max. forward impulse current: 59A Max. off-state voltage: 600V Leakage current: 1µA Case: PG-TO220-2 Type of diode: Schottky rectifying Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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IDH12SG60C | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; 125W; PG-TO220-2 Mounting: THT Kind of package: tube Technology: CoolSiC™ 3G; SiC Power dissipation: 125W Max. forward voltage: 1.8V Load current: 12A Max. forward impulse current: 59A Max. off-state voltage: 600V Leakage current: 1µA Case: PG-TO220-2 Type of diode: Schottky rectifying Semiconductor structure: single diode |
Produkt ist nicht verfügbar |