IDH16G65C5XKSA2 Infineon Technologies
auf Bestellung 5421 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 10.54 EUR |
| 10+ | 6.9 EUR |
| 100+ | 6.32 EUR |
| 250+ | 6.21 EUR |
| 500+ | 5.6 EUR |
| 2500+ | 5.46 EUR |
| 5000+ | 5.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IDH16G65C5XKSA2 Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO220-1, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 470pF @ 1V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: PG-TO220-2-1, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A, Current - Reverse Leakage @ Vr: 200 µA @ 650 V.
Weitere Produktangebote IDH16G65C5XKSA2 nach Preis ab 7.83 EUR bis 10.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IDH16G65C5XKSA2 | Hersteller : Infineon Technologies |
 Description: DIODE SIL CARB 650V 16A TO220-1Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 470pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
auf Bestellung 138 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IDH16G65C5XKSA2 | Hersteller : Infineon Technologies |
Rectifier Diode Schottky SiC 650V 16A 2-Pin(2+Tab) TO-220 Tube |
auf Bestellung 1170 Stücke: Lieferzeit 14-21 Tag (e) |