IDH20G65C5 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 119A
Leakage current: 4.1µA
Kind of package: tube
Power dissipation: 157W
Heatsink thickness: 1.17...137mm
Max. forward voltage: 1.8V
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 119A
Leakage current: 4.1µA
Kind of package: tube
Power dissipation: 157W
Heatsink thickness: 1.17...137mm
Max. forward voltage: 1.8V
Anzahl je Verpackung: 1 Stücke
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Technische Details IDH20G65C5 INFINEON TECHNOLOGIES
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W, Type of diode: Schottky rectifying, Technology: CoolSiC™ 5G; SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 20A, Semiconductor structure: single diode, Case: PG-TO220-2, Max. forward impulse current: 119A, Leakage current: 4.1µA, Kind of package: tube, Power dissipation: 157W, Heatsink thickness: 1.17...137mm, Max. forward voltage: 1.8V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IDH20G65C5
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IDH20G65C5 | Hersteller : Infineon Technologies |
 Schottky Diodes & Rectifiers SIC DIODES |
Produkt ist nicht verfügbar |
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IDH20G65C5 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward impulse current: 119A Leakage current: 4.1µA Kind of package: tube Power dissipation: 157W Heatsink thickness: 1.17...137mm Max. forward voltage: 1.8V |
Produkt ist nicht verfügbar |