IDK02G65C5XTMA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 2A; 36W
Type of diode: Schottky rectifying
Case: PG-TO263-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Leakage current: 0.1µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Power dissipation: 36W
auf Bestellung 648 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 131+ | 0.55 EUR |
| 137+ | 0.52 EUR |
| 144+ | 0.5 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IDK02G65C5XTMA1 INFINEON TECHNOLOGIES
Description: DIODE SIL CARB 650V 2A PGTO2632, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 70pF @ 1V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: PG-TO263-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A, Current - Reverse Leakage @ Vr: 330 µA @ 650 V.
Weitere Produktangebote IDK02G65C5XTMA1 nach Preis ab 0.5 EUR bis 1.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IDK02G65C5XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 2A; 36W Type of diode: Schottky rectifying Case: PG-TO263-2 Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. off-state voltage: 650V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.5V Leakage current: 0.1µA Max. forward impulse current: 22A Kind of package: reel; tape Power dissipation: 36W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 648 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
 |
IDK02G65C5XTMA1 | Hersteller : Infineon Technologies |
Diode Schottky 650V 2A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
IDK02G65C5XTMA1 | Hersteller : Infineon Technologies |
Diode Schottky 650V 2A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| IDK02G65C5XTMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IDK02G65C5XTMA1 - IDK02G65 - COOLSIC SCHOTTKY DIODE euEccn: TBC hazardous: true productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 224 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||
 |
IDK02G65C5XTMA1 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 650V 2A PGTO2632 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 70pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 330 µA @ 650 V |
Produkt ist nicht verfügbar |
|||||||||||
| IDK02G65C5XTMA1 | Hersteller : Infineon Technologies |
SiC Schottky Diodes SIC DIODES |
Produkt ist nicht verfügbar |