IDK03G65C5XTMA1 Infineon Technologies
auf Bestellung 6568 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 397+ | 1.38 EUR |
| 500+ | 1.28 EUR |
| 1000+ | 1.16 EUR |
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Technische Details IDK03G65C5XTMA1 Infineon Technologies
Description: DIODE SIL CARB 650V 3A PGTO2632, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 100pF @ 1V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: PG-TO263-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A, Current - Reverse Leakage @ Vr: 500 µA @ 650 V.
Weitere Produktangebote IDK03G65C5XTMA1 nach Preis ab 1.16 EUR bis 1.42 EUR
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IDK03G65C5XTMA1 | Hersteller : Infineon Technologies |
 Diode Schottky 650V 3A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2600 Stücke: Lieferzeit 14-21 Tag (e) |
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IDK03G65C5XTMA1 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 650V 3A PGTO2632 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 100pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 650 V |
auf Bestellung 9168 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDK03G65C5XTMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IDK03G65C5XTMA1 - IDK03G65 - COOLSIC SCHOTTKY DIODE euEccn: TBC hazardous: true productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 9168 Stücke: Lieferzeit 14-21 Tag (e) |
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IDK03G65C5XTMA1 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 650V 3A PGTO2632 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 100pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 650 V |
Produkt ist nicht verfügbar |