IDL04G65C5XUMA1 Infineon Technologies

Description: DIODE SIL CARBIDE 650V 4A VSON-4, Current - Reverse Leakage @ Vr: 70 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-VSON-4, Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 130pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Tape & Reel (TR).