IDP08E65D2XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE STANDARD 650V 8A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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Technische Details IDP08E65D2XKSA1 Infineon Technologies
Description: DIODE STANDARD 650V 8A TO2202, Packaging: Bulk, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 40 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote IDP08E65D2XKSA1 nach Preis ab 1.3 EUR bis 4.38 EUR
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IDP08E65D2XKSA1 | Infineon Technologies |
Small Signal Switching Diodes IGBT PRODUCTS |
auf Bestellung 936 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDP08E65D2XKSA1 |
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Hersteller: Infineon Technologies
Small Signal Switching Diodes IGBT PRODUCTS
Small Signal Switching Diodes IGBT PRODUCTS
auf Bestellung 936 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.38 EUR |
| 10+ | 2.62 EUR |
| 100+ | 1.92 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.41 EUR |
| 2500+ | 1.37 EUR |
| 5000+ | 1.3 EUR |