IDP20E65D2XKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 20A; Ifsm: 60A; Ufmax: 2.2V; Ir: 40uA
Mounting: THT
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 32ns
Leakage current: 40µA
Max. forward voltage: 2.2V
Load current: 20A
Max. load current: 40A
Max. forward impulse current: 60A
Max. off-state voltage: 650V
| Anzahl | Preis |
|---|---|
| 45+ | 1.62 EUR |
| 57+ | 1.26 EUR |
| 65+ | 1.11 EUR |
| 85+ | 0.85 EUR |
| 88+ | 0.81 EUR |
| 100+ | 0.73 EUR |
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Technische Details IDP20E65D2XKSA1 INFINEON TECHNOLOGIES
Description: DIODE GP 650V 40A TO220-2-1, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: PG-TO220-2-1, Current - Average Rectified (Io): 40A, Technology: Standard, Reverse Recovery Time (trr): 32 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote IDP20E65D2XKSA1 nach Preis ab 1.54 EUR bis 3.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IDP20E65D2XKSA1 | Infineon Technologies |
Description: DIODE GP 650V 40A TO220-2-1Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO220-2-1 Current - Average Rectified (Io): 40A Technology: Standard Reverse Recovery Time (trr): 32 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 466 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IDP20E65D2XKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE GP 650V 40A TO220-2-1
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 32 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GP 650V 40A TO220-2-1
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 32 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 466 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.56 EUR |
| 50+ | 1.72 EUR |
| 100+ | 1.54 EUR |


