IDP30E65D1XKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 90A; TO220-2; 143W
Max. off-state voltage: 650V
Max. forward voltage: 1.35V
Load current: 30A
Max. forward impulse current: 90A
Case: TO220-2
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Power dissipation: 143W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
| Anzahl | Preis |
|---|---|
| 31+ | 2.35 EUR |
| 41+ | 1.74 EUR |
| 47+ | 1.53 EUR |
| 53+ | 1.37 EUR |
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Technische Details IDP30E65D1XKSA1 INFINEON TECHNOLOGIES
Description: DIODE GP 650V 60A TO220-2-1, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: PG-TO220-2-1, Current - Average Rectified (Io): 60A, Technology: Standard, Reverse Recovery Time (trr): 64 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote IDP30E65D1XKSA1 nach Preis ab 1.17 EUR bis 4.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IDP30E65D1XKSA1 | Infineon Technologies |
Small Signal Switching Diodes IGBT PRODUCTS |
auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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IDP30E65D1XKSA1 | Infineon Technologies |
Description: DIODE GP 650V 60A TO220-2-1 Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO220-2-1 Current - Average Rectified (Io): 60A Technology: Standard Reverse Recovery Time (trr): 64 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 655 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IDP30E65D1XKSA1 |
|
Hersteller: Infineon Technologies
Small Signal Switching Diodes IGBT PRODUCTS
Small Signal Switching Diodes IGBT PRODUCTS
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.94 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.74 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.18 EUR |
| 5000+ | 1.17 EUR |
| IDP30E65D1XKSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE GP 650V 60A TO220-2-1
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 64 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GP 650V 60A TO220-2-1
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 64 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 655 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.98 EUR |
| 50+ | 2.47 EUR |
| 100+ | 2.23 EUR |
| 500+ | 1.8 EUR |