IDW10G120C5BFKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 9.56 EUR |
| 10+ | 5.77 EUR |
| 100+ | 4.54 EUR |
| 480+ | 4.01 EUR |
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Technische Details IDW10G120C5BFKSA1 Infineon Technologies
Description: DIODE ARRAY SIC 1200V TO247-3-41, Supplier Device Package: PG-TO247-3-41, Current - Average Rectified (Io) (per Diode): 17A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Current - Reverse Leakage @ Vr: 40 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IDW10G120C5BFKSA1 | Infineon Technologies |
 Description: DIODE ARRAY SIC 1200V TO247-3-41Supplier Device Package: PG-TO247-3-41 Current - Average Rectified (Io) (per Diode): 17A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Current - Reverse Leakage @ Vr: 40 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IDW10G120C5BFKSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE ARRAY SIC 1200V TO247-3-41
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io) (per Diode): 17A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Description: DIODE ARRAY SIC 1200V TO247-3-41
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io) (per Diode): 17A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH